Elements of Statistical Mechanics, Third Edition by D. ter Haar

By D. ter Haar

Following the Boltzmann-Gibbs method of statistical mechanics, this new version of Dr ter Haar's very important textbook, parts of Statistical Mechanics, presents undergraduates and extra senior lecturers with an intensive creation to the topic. every one bankruptcy is via an issue part and designated bibliography.

the 1st six chapters of the ebook offer a radical creation to the fundamental tools of statistical mechanics and certainly the 1st 4 can be utilized as an introductory direction in themselves. The final 3 chapters supply extra aspect at the equation of nation, with distinctive emphasis at the van der Waals fuel; the second-quantisation method of many-body structures, with an exam of two-time temperature-dependent eco-friendly services; section transitions, together with numerous approximation equipment for treating the Ising version, a short dialogue of the precise answer of the two-dimensional sq. Ising version, and brief introductions to renormalisation team equipment and the Yang and Lee concept of part transitions. within the challenge part which follows every one bankruptcy the reader is requested to accomplish proofs of easy conception and to use that conception to varied actual occasions. each one bankruptcy bibliography contains papers that are of ancient curiosity. an additional aid to the reader are the options to chose difficulties which look on the finish of the book.

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Extra resources for Elements of Statistical Mechanics, Third Edition

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Boca Raton, FL: CRC. , and Unlu, K. 2004. SESEE: A soft error simulation and estimation engine. In Proceedings of the 7th Annual MAPLD International Conference. pdf. EIA-JESD57. 1996. Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation. Arlington, VA: Electronic Industries Alliance (EIA). ESCC25100. 2002. Single event effects test method and guidelines, ESCC basic specification No. 25100. European Space Agency. F. 1979. Single event upset of dynamic RAMs by neutrons and protons.

1996) Baumann et al. 1 Classification of single-event phenomena. of identifying soft-error mechanisms at the origin of such sudden malfunctioning of the circuit equipment, in particular due to their stochastic nature. During this pioneering period, in the early 1980s, most of the terminology used in the field of single-event effects was introduced and then more rigorously defined or specified in different standards (JESD89A 2006; EIA-JESD57 1996; ESCC25100 2002). We summarize in the following the most important terms used in this book.

The experimental flux for neutrons above 1 MeV is deduced from Goldhagen’s data. (Chapter 5) that pertinent energy ranges for such effects are, rather, in the megaelectronvolt range and below, an energy domain not covered by the great majority of studies performed until now. This lack of knowledge in the characterization of low-energy muons (below 1 MeV) at ground level is a challenging issue for the prediction of radiation effects in microelectronics; this point will be discussed in Chapter 10.

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